| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| LH534A00 LH534A00T |
CMOS 4M(512K X 8) Mask-Programmable ROM
CMOS 4M (512K x 8) MROM
Lens Cap; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
Sharp Electrionic Components
Sharp Corporation
|
| MX27C4000 MX27C4000MC-10 MX27C4000MC-12 MX27C4000M |
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 150 ns, PDSO32
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4M-BIT [512K x8] CMOS EPROM 512K X 8 OTPROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| W24V04 |
512K×8bit CMOS Static RAM(512K×8位CMOS静态RAM)
|
Winbond Electronics Corp
|
| W39V040FAT W39V040FAQ W39V040FAP |
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE 512K X 8 FLASH 3.3V PROM, 11 ns, PQCC32
|
http://
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module
Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module
EEPROM MCP
|
White Electronic Designs
|
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| W29C040T-12 W29C040T-90B W29C040T-12B W29C040P-12 |
512K X 8 CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
|
Winbond Electronics, Corp.
|
| MX26LV800ABXBC-55G MX26LV800ABXBC-70G MX26LV800ATX |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
